About What are the ion sputtering processes for photovoltaic panels
Physical etching or sputtering is a dry process where the material is removed due to ion bombardment. The ion bombardment is delivered by a plasma. This process is known to [1]: be chemically unselective – depends only on the surface binding energy and the masses of the targets and projectiles, have a low etch rate – one atom per incident ion.
Physical etching or sputtering is a dry process where the material is removed due to ion bombardment. The ion bombardment is delivered by a plasma. This process is known to [1]: be chemically unselective – depends only on the surface binding energy and the masses of the targets and projectiles, have a low etch rate – one atom per incident ion.
In this work, we report the first application of ion-beam sputtering to deposit ITO back electrode for the fabrication of semitransparent perovskite solar cells. The benchmark for depositing TCO coatings was magnetron sputtering, which was used to fabricate the reference device configuration.
Here, we focus on the use of sputtered indium tin oxide (ITO) as a barrier layer to stop major degradations. To mitigate efficiency losses of cells with the ITO barrier, we optimized various sputtering process parameters such as ITO layer thickness, target power density, and working pressure.
Sputtering is another widely used PVD technique in PV that can be upscaled. In sputtering processes, a magnetron is positioned near the target. The ionic gas is introduced in an accelerated way into the vacuum chamber, blasting the target, releasing atomic-sized particles to be deposited, which will be violently projected onto the substrate.
In this subsection, we investigate how ITO sputtering process itself influences on the main electrical parameters of a n-p heterojunction photocell. In particular, the effect of the ITO thickness, ranged from 45 to 140 nm, and the film nature are both tested.
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6 FAQs about [What are the ion sputtering processes for photovoltaic panels ]
What is sputter damage in solar cells?
This issue, known as ʻsputter damageʼ, presents challenges in multiple solar cell structures, including a-Si:H-based SHJ solar cells, polycrystalline silicon (poly-Si)-based solar cells, and nc-SiC:H-based TPC solar cells. [2 - 6] The origin of sputter damage remains unclear due to the multitude of potential factors during the sputtering process.
How ion-beam sputtering deposited a semitransparent perovskite solar cell?
In this work, the semitransparent perovskite solar cell with p-i-n architecture is fabricated with ITO back electrode deposited directly on C 60 electron transporting layer. A comparative analysis was conducted to evaluate the performance and properties of ITO films deposited using ion-beam sputtering (IBS) and the more common MS method.
How can ionization be controlled by a sputtered atom?
By ionizing the sputtered atoms the ion energy at the substrate can be controlled by applying a substrate bias and also a directional deposition and collimation of these ions with the plasma sheath adjacent to the substrate surface is made possible.
Does sputter deposition damage the passivation quality of a solar cell?
However, their deposition can damage the passivation quality in the solar cell. This damage during the sputter deposition is a complex issue that has not been fully understood, particularly in various silicon-based materials like amorphous silicon, polycrystalline silicon, or nanocrystalline silicon carbide.
What determines the ionization process in a RF sputter?
The electron density dictates the dominating ionization process within the discharge. Coburn and Kay (1971) demonstrated that the Penning mechanism is responsible for the ionization of the sputtered material in the rf sputter tool.
What is the sputter rate of a cathode ion?
The sum is taken over all the ions in the discharge, and Yj is the sputter yield of the cathode target material for ion j. Equation (38) states that the sputter rate depends on the sum of Yj Ji,j for each ion bombarding the target.
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